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Effect of deposition parameter on structural and electrical properties of n-type cadmium selenide thin films

Aneet Kumar Verma, S.R.Vishwakarma, Ravishankar Nath Tripathi, Rahul

CdSe is an important compound semiconducting material for the development of various applications in solid state devices such as solar cells, high efficiency thin film transistors. In recent years major attention has been given to the investigation of structural and electrical properties for the improvement of performance of such devices and its applications[1]. We prepared n-type CdSe thin films on glass substrate using cadmium selenide material with various composition of Cd (99.999%) and Se (99.999%) by electron beam evaporation technique under vacuum 10-5 torr in vacuum coating unit, keep substrates at room temperature and studied the effect of composition ratio of cadmium & selenium on thin films and evaluate the grain size, resistivity, hallmobility and carrier concentration in n-type CdSe thin films.